SYNTHESIS AND PHOTOELECTROCHEMICAL CHARACTERIZATION OF WSE2 PHOTOELECTRODES

Abstract

Semiconductor electrodes based on thin films of tungsten diselenide have been prepared by electrochemical codeposition technique. Potentiostatic and galvanostatic methods of deposition were compared in terms of quality of electrodeposited  films. Electrochemical conditions required for the formation of these materials endowed with acceptable functional activity was ascertained by investigating current voltage characteristics using electrochemical solutions of interest. The electrodeposits were characterized by their examination of currentvoltage characteristics in dark and under illumination. All the prepared tungsten diselenidethin films exhibit p-type semiconductivity. WSe₂ films preparedgalvanostatically exhibit somewhat enhanced photoresponse and substantially improved resistance towards electrochemical corrosion in comparison to those prepared under potentiostatic control.